ESDSOT12C

Marking：12C；Package：SOT-23；Dual Transient Voltage Suppressors for ESD Protection

Features SOT-23Package 2UnidirectionalTransilfunctions PeakPowerDissipation300W@8x20usPulse LowLeakage FastResponseTime

FTC9012SP

Marking：12P；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors PNPSilicon FEATURE WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FTC9012SQ

Marking：12Q；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors PNPSilicon FEATURE WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FTC9012SR

Marking：12R；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors PNPSilicon FEATURE WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

FTC9012SS

Marking：12S；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors PNPSilicon FEATURE WedeclarethatthematerialofproductcompliancewithRoHSrequirements.

GLZ12A

Marking：12A；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0–56VNominalZenerVoltage IdeallySuitedforAutomatedAssembly ForUseinVoltageStabilizerorReference

GLZ12B

Marking：12B；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0–56VNominalZenerVoltage IdeallySuitedforAutomatedAssembly ForUseinVoltageStabilizerorReference

GLZ12C

Marking：12C；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

PlanarDieConstruction 500mWPowerDissipation 2.0–56VNominalZenerVoltage IdeallySuitedforAutomatedAssembly ForUseinVoltageStabilizerorReference

HFA3127RZ

Marking：127Z；Package：16Ld3x3QFN；Ultra High Frequency Transistor Arrays

TheHFA3046,HFA3096,HFA3127andtheHFA3128areUltraHighFrequencyTransistorArraysthatarefabricatedfromIntersilCorporation’scomplementarybipolarUHF-1process.Eacharrayconsistsoffivedielectricallyisolatedtransistorsonacommonmonolithicsubstrate.TheNPNtransistorsexhibi

HFA3127RZ

Marking：127Z；Package：16LD3x3QFN；Ultra High Frequency Transistor Arrays

Features •NPNtransistor(fT)..........................8GHz •NPNcurrentgain(hFE)........................130 •NPNearlyvoltage(VA)........................50V •PNPtransistor(fT)................