DTC143ZUB

Marking：123；Package：UMT3F；100mA / 50V Digital transistors

Features 1)Built-inbiasresistors.R1=4.7kΩ,R2=47kΩ. 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuit

DTC143ZUB

Marking：123；Package：UMT3F；NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-inbiasresistors.R1=4.7kΩ,R2=47kΩ. 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuit

DTC143ZUB

Marking：123；Package：UMT3F；DTC143Z series

Features 1)Built-inbiasresistors.R1=4.7kΩ,R2=47kΩ. 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuit

DTC143ZUB

Marking：123；Package：UMT3F；NPN 100mA 50V Digital Transistors

Features 1)Built-inbiasresistors.R1=4.7kΩ,R2=47kΩ. 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuit

DTC143ZUB

Marking：123；Package：UMT3F；NPN 100mA 50V Digital Transistors

Features 1)Built-inbiasresistors.R1=4.7kΩ,R2=47kΩ. 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuit

ESD12V32D-A

Marking：12W；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature 240~408WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneI/Olineorpowerline(Unidirectional) Lowclampingvoltage Workingvoltages:3.3V~36V Lowleakagecurrent IEC61000-4-2(ESD)±30kV(air),±30kV(contact): 3.3V~15V); IEC61000-4-2(ESD)±15kV(air),±15kV(contact)

ESD12V32DS-A

Marking：12W；Package：SOD-323；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 240~408WattsPeakPulsePowerperLine(tp=8/20μs) ProtectsoneunidirectionalI/Olineorpowerline LowClampingVoltage WorkingVoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±30k

ESD12VD3BHE3

Marking：12B；Package：SOD-323；ESD Protection Device

Features •AEC-Q101Qualified •ProtectsOneDataorPowerLine •LowLeakage •UltraLowclampingVoltage •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •HalogenFree.“Green”Device(Note1) •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Complia

ESD12VDH-HF

Marking：12D；Package：DFN1610-2L；SMD ESD Protection Diode

Features -ESD/transientprotectionofhighspeeddatalines. IEC61000-4-2(ESD):±30kV(air),±30kV(contact). IEC61000-4-4(EFT):40A(5/50ns). IEC61000-4-5(Lightning):50A(8/20μs). -Lowleakagecurrent. -Lowclampingvoltage. -ProtectsoneI/Oorpowerline. -Lowreversesta

ESD5641D12-3

Marking：12A；Package：DFN2020-3；1-Line High Power TVS Diode

Features 5400Wpeakpulsepower(8/20 Lowleakage:nAlevel Lowoperatingvoltage:12V Ultralowclampingvoltage Onepowerlineprotects Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)80A(5/50ns)