| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：12M2H053；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=29AatTC=100°C •RDS(on)=52.6mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H078；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=21AatTC=100°C •RDS(on)=78.1mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H234；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=15AatTC=100°C •RDS(on)=115.7mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstpara | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H181；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=10.5AatTC=100°C •RDS(on)=181.4mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstpa | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H234；Package：PG-TO263-7-HV-ND5.8；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features •VDSS=1200VatTvj=25°C •IDDC=6.2AatTC=100°C •RDS(on)=233.9mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstpar | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H007；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features •VDSS=1200VatTvj=25°C •IDDC=181AatTC=100°C •RDS(on)=7.5mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H010；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features •VDSS=1200VatTvj=25°C •IDDC=138AatTC=100°C •RDS(on)=10mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasi | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H017；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features •VDSS=1200VatTvj=25°C •IDDC=84AatTC=100°C •RDS(on)=17.1mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H026；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features •VDSS=1200VatTvj=25°C •IDDC=58AatTC=100°C •RDS(on)=25.4mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：12M2H034；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features •VDSS=1200VatTvj=25°C •IDDC=45AatTC=100°C •RDS(on)=34mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
12
- 制造商：
KNIPEX
- 功能描述：
STRIPPER AUTOMATIC INSULATING
- 功能描述：
STRIPPER, AUTOMATIC INSULATING
- 功能描述：
STRIPPER, AUTOMATIC INSULATING; For Use
- With：
Solid & Stranded Wires;
- SVHC：
No SVHC(19-Dec-2012);
- Length：
180mm; No. of Strip
- Steps：
4; Stripping
- Capacity：
2.0mm;
- Weight：
400g ;RoHS
- Compliant：
NA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
SOT89 |
195 |
现货供应 |
询价 | |||
12 |
1 |
1 |
询价 | ||||
PANASONIC/松下 |
23+ |
11 |
6500 |
专注配单,只做原装进口现货 |
询价 | ||
PANASONIC/松下 |
23+ |
11 |
6500 |
专注配单,只做原装进口现货 |
询价 | ||
CHINA |
2014+ |
1206 |
800000 |
全新原装现货 |
询价 | ||
Lattice |
24+ |
PLCC |
10 |
新 |
询价 | ||
IR |
23+ |
120A40VD |
320 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
ELECTRO |
2020+ |
SMD |
970 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
VISHAY |
16CN |
D-PAK |
5546 |
原厂直销 |
询价 | ||
SUNMATE(森美特) |
2019+ROHS |
SMA |
66688 |
森美特高品质产品原装正品免费送样 |
询价 |
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