DAC121S101DGKTSEP

Marking：121S；Package：VSSOP；DAC121S101-SEP 12-Bit, Micro Power, RRO Digital-to-Analog Converter

1Features •Radiationtolerance: –Totalionizingdose(TID):30krad(Si) –Single-eventlatch-up(SEL):43MeV-cm2/mg –Single-eventfunctionalinterrupt(SEFI): 43MeV-cm2/mg •Space-enhancedplastic(spaceEP): –OutgassingtestperformedperASTME595 –Vendoritemdrawing(VID)V62/246

DESD1Z12

Marking：12M；Package：SOD-123；Plastic-Encapsulate Diodes

FEATURES Bi-directionalESDprotection Lowreversestand-offvoltage:12V Lowreverseclampingvoltage Lowleakagecurrent Fastresponsetime JESD22-A114-BESDRatingofclass3Bperhumanbodymodel IEC61000-4-2Level4ESDprotection

DESD3Z12

Marking：12M；Package：SOD-323；TVS Diode

Features ◆150Wattspeakpulsepower(tp=8/20μs) ◆Transientprotectionforhighspeeddatalinesto IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ns) ◆ProtectsOnePowerorI/OPort ◆Lowleakagecurrent ◆Lowoperatingandclampingvoltages ◆Solid-stat

DMWSH120H90SM4Q

Marking：120H90SM4；Package：TO247-4；1200V N-CHANNEL SILICON CARBIDE POWER MOSFET

Features LowOn-Resistance HighBVDSSRatingforPowerApplication LowInputCapacitance Lead-FreeFinish;RoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMWSH120H90SM4Qissuitableforautomotive applicationsrequiringspecificchangecontro

DTC113ZUA

Marking：121；Package：UMT3；NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 2)Eachbiasresistorisathin-filmresistor.Sincetheyarecompletelyinsulated,theinputcanbenegativelybiased.Theinsulationalsoel

DTC143ZKA

Marking：123；Package：UMT3；NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

Features 1)Built-inbiasresistors.R1=4.7kΩ,R2=47kΩ. 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuit

DTC143ZKA

Marking：123；Package：UMT3；NPN 100mA 50V Digital Transistors

Features 1)Built-inbiasresistors.R1=4.7kΩ,R2=47kΩ. 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuit

DTC143ZKA

Marking：123；Package：UMT3；DTC143Z series

Features 1)Built-inbiasresistors.R1=4.7kΩ,R2=47kΩ. 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuit

DTC143ZUA

Marking：123；Package：UMT3；NPN 100mA 50V Digital Transistors

Features 1)Built-inbiasresistors.R1=4.7kΩ,R2=47kΩ. 2)Built-inbiasresistorsenabletheconfigurationof aninvertercircuitwithoutconnectingexternal inputresistors(seeinnercircuit). 3)Onlytheon/offconditionsneedtobeset foroperation,makingthecircuit

DTC143ZUA

Marking：123；Package：UMT3；100mA / 50V Digital transistors (with built-in resistors)

Features 1)Built-inbiasresistorsenabletheconfigurationofaninvertercircuitwithoutconnectingexternalinputresistors(seeequivalentcircuit). 2)Thebiasresistorsconsistofthinfilmresistorswithcompleteisolationtoallownegativebiasingoftheinput.Theyalsohavetheadvanta