IMCQ120R040M2H

Marking：12M2H040；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features •VDSS=1200VatTvj=25°C •IDDC=39AatTC=100°C •RDS(on)=39.6mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas

IMCQ120R053M2H

Marking：12M2H053；Package：PG-HDSOP-22-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling

Features •VDSS=1200VatTvj=25°C •IDDC=31AatTC=100°C •RDS(on)=52.6mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparas

IMSQ120R012M2HH

Marking：12M2H012；Package：PG-HDSOP-16-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features •VDSS=1200VatTvj=25°C •IDDC=89AatTC=100°C •RDS(on)=12mΩatVGS=18V,Tvj=25°C •Internallayoutoptimizedforfastswitching •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvo

IMSQ120R026M2HH

Marking：12M2H026；Package：PG-HDSOP-16-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features •VDSS=1200VatTvj=25°C •IDDC=59AatTC=100°C •RDS(on)=26mΩatVGS=18V,Tvj=25°C •Internallayoutoptimizedforfastswitching •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvo

IMSQ120R040M2HH

Marking：12M2H040；Package：PG-HDSOP-16-U03；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology

Features •VDSS=1200VatTvj=25°C •IDDC=40AatTC=100°C •RDS(on)=40mΩatVGS=18V,Tvj=25°C •Internallayoutoptimizedforfastswitching •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvo

IMW120R007M1H

Marking：12M1H007；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features •VDSS=1200VatTvj=25°C •IDCC=225AatTvj=25°C •RDS(on)=7mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltagecanbeapplied •Robustbodydiodefor

IMW120R014M1H

Marking：12M1H014；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features •VDSS=1200VatTvj=25°C •IDCC=127AatTvj=25°C •RDS(on)=14mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltagec

IMW120R020M1H

Marking：12M1H020；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features •VDSS=1200VatTvj=25°C •IDCC=98AatTvj=25°C •RDS(on)=19mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltageca

IMW120R040M1H

Marking：12M1H040；Package：PG-TO247-3-STD-N2.5；CoolSiC??1200 V SiC Trench MOSFET : silicon carbide MOSFET

Features •VDSS=1200VatTvj=25°C •IDCC=55AatTvj=25°C •RDS(on)=39mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •Shortcircuitwithstandtime3µs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasiticturnon,0Vturn-offgatevoltageca

IMZ120R045M1

Marking：120M1045；Package：PG-TO247-4；CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features Verylowswitchinglosses Threshold-freeonstatecharacteristic Widegate-sourcevoltagerange Benchmarkgatethresholdvoltage,VGS(th)=4.5V 0Vturn-offgatevoltage Fullycontrollabledv/dt Commutationrobustbodydiode,readyforsynchronousrectification Eas