IMZC120R034M2H

Marking：12M2H034；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDDC=39AatTC=100°C •RDS(on)=34mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit

IMZC120R040M2H

Marking：12M2H040；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDDC=34AatTC=100°C •RDS(on)=40mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit

IMZC120R053M2H

Marking：12M2H053；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDDC=27AatTC=100°C •RDS(on)=53mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit

IMZC120R078M2H

Marking：12M2H078；Package：PG-TO247-4-U07；CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with .XT interconnection technology

Features •VDSS=1200VatTvj=25°C •IDDC=20AatTC=100°C •RDS(on)=78mΩatVGS=18V,Tvj=25°C •Verylowswitchinglosses •OverloadoperationuptoTvj=200°C •Shortcircuitwithstandtime2μs •Benchmarkgatethresholdvoltage,VGS(th)=4.2V •Robustagainstparasit

IPD122N10N3G

Marking：122N10N；Package：PG-TO252-3；OptiMOS™3 Power-Transistor

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchron

IPF129N20NM6

Marking：129N20N6；Package：PG-TO263-7；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61

IPP129N10NF2S

Marking：129N10NS；Package：PG-TO220-3；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPT129N20NM6

Marking：129N20N6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •Highavalancheenergyrating •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61

IPTC012N06NM5

Marking：12N06NM5；Package：PG-HDSOP-16；MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features •Optimizedformotordrivesandbatterypoweredapplications •Optimizedfortopsidecooling •Highcurrentcapability •175°Crated •100avalanchetested •Superiorthermalperformance •N-Channel •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-2

ISC012N04LM6

Marking：12N04LM6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 40 V

Features •N-channel •Verylowon-resistanceRDS(on) •Superiorthermalresistance •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Optimizedforsyncronousapplication •175°Crated