AIMCQ120R030M1T

Marking：12A030M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=78AatTC=25°C •RDS(on)=30mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestdev

AIMCQ120R040M1T

Marking：12A040M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=61AatTC=25°C •RDS(on)=40mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestdev

AIMCQ120R060M1T

Marking：12A060M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=44AatTC=25°C •RDS(on)=60mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestdev

AIMCQ120R080M1T

Marking：12A080M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=34AatTC=25°C •RDS(on)=80mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestdev

AIMCQ120R120M1T

Marking：12A120M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=24AatTC=25°C •RDS(on)=117mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestde

AIMCQ120R160M1T

Marking：12A160M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=18.6AatTC=25°C •RDS(on)=160mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowest

AZ1235-04S.R7G

Marking：125XY；Package：SOT23-6L；Low Capacitance ESD Protection Array For High Speed Data Interfaces

Features
ESDprotectionfor4high-speedI/Ochannels
Protects4I/Olinesoperatingupto3.3Vandbelow
ProtectsoneVDDlineoperatingupto5Vandbelow
Providetransientprotectionforeachchannelto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)80A(5/50ns) IE

AZ1345-04F

Marking：120XY；Package：DFN2510P8E；Ultra Low Capacitance ESD Protection Array For High Speed I/O Port

Features
ESDProtectforSuperSpeedDifferential Signaling(above5Gb/s)channels
ProtectsfourI/Olines
ProvideESDprotectionforeachlineto IEC61000-4-2(ESD)±15kV(air),±10kV(contact)
Foroperatingvoltageof5Vandbelow
Ultralowcapacitance:0.35pFtypical
Fast

AZ1515-04S.R7G

Marking：124XY；Package：SOT23-6L；Low Capacitance ESD Protection Array For High Speed Data Interfaces

Features
ESDprotectfor4high-speedI/Ochannels
Providetransientprotectionforeachchannelto IEC61000-4-2(ESD)±30kV(air/contact) IEC61000-4-4(EFT)80A(5/50ns) IEC61000-4-5(Lightning)30A(8/20μs)forany I/O-to-GND IEC61000-4-5(Lightning)37A(8/20μs)for VDD-to-GND

AZ4712-01F

Marking：12A；Package：DFN2020-3；1-Line High Power TVS Diode

Features 5400Wpeakpulsepower(8/20 Lowleakage:nAlevel Lowoperatingvoltage:12V Ultralowclampingvoltage Onepowerlineprotects Complieswithfollowingstandards: –IEC61000-4-2(ESD)immunitytest Airdischarge:±30kV Contactdischarge:±30kV –IEC61000-4-4(EFT)80A(5/50ns)