丝印：100N10F7；Package：TO-220FP；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：100N10F7；Package：I2PAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：100N3LLH6；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6)STripFET™ VI DeepGATE™ Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses ■ Very low switching gate charge Application ■ Switching applications Description This product utilizes the 6th generation of design rules

文件：564.91 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

丝印：100N3LLH7；Package：PowerFLAT；N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6) STripFET™ VII DeepGATE™ Power MOSFET

Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness Application ■ Switching applications Description This device utilizes the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. Th

文件：525.06 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

丝印：100N10F7；Package：TO-220；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET™ F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Applications • Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trenc

文件：652.33 Kbytes 页数：28 Pages

STMICROELECTRONICS

意法半导体

丝印：100N03；Package：TO-252-4R；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features  30V , 100A RDSON (typ)= 2.9mΩ @ VGS =10V RDSON (typ)= 4.3mΩ @ VGS =4.5V  Advanced Trench Technology  Provide Excellent RDS(ON) and Low Gate Charge  Lead free product is acquired Application  Load Switch  PWM Application  Power management 100 UIS TESTED! 100 ΔVds TEST

文件：2.09987 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：100N30；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

文件：225.12 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：100N60；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

文件：239.2 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：100N65AG；Package：HPAK-7；Automotive-grade silicon carbide Power MOSFET, 650 V, 95 A, 20 m廓 (typ., TJ = 25 째C) in an H2PAK-7 package

文件：623.47 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：100N6F7；Package：D2PAK；N-channel 60 V, 4.7 m??typ.,100 A STripFET??F7 Power MOSFET in a D짼PAK package

文件：555.77 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体