丝印：100N6F7；Package：D2PAK；N-channel 60 V, 4.7 m??typ.,100 A STripFET??F7 Power MOSFET in a D짼PAK package

文件：555.77 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道60 V、4.7 mOhm典型值、100 A STripFET F7功率MOSFET，D2PAK封装

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. • Among the lowest RDS(on) on the market \n• Excellent figure of merit (FoM) \n• Low Crss/Ciss ratio for EMI immunity \n• High avalanche ruggedness;

ST

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丝印：D2PAK；Package：TO-263；Isc N-Channel MOSFET Transistor

文件：294.5 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：311.28 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60 V, 4.6 m??typ., 46 A STripFET??F7 Power MOSFET in a TO-220FP package

文件：419.46 Kbytes 页数：13 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

文件：320.26 Kbytes 页数：2 Pages

ISC

无锡固电