Full Flange Attenuators

文件：180.5 Kbytes 页数：2 Pages

ANAREN

Low VSWR

文件：99.08 Kbytes 页数：2 Pages

ANAREN

Circuit Protection Solutions Low Voltage Fuse Links Catalogue

文件：4.91849 Mbytes 页数：55 Pages

COOPER

丝印：100N03LS；Package：TDSON-8；OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

文件：390.79 Kbytes 页数：10 Pages

INFINEON

英飞凌

丝印：100N08N；Package：PG-TO262-3；N-channel, normal level

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x Ros(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC) for target applications

文件：1.01601 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：100N08N；Package：PG-TO220-3；N-channel, normal level

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x Ros(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC) for target applications

文件：1.01601 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：100N06SA；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：491.51 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：100N06SA；Package：TO-220AB-L；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：459.29 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：100N650；Package：TO-247；This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.

Features High ruggedness for motor control VCE(sat) positive temperature coefficient Very soft, fast recovery anti-parallel diode Low EMI Maximum junction temperature 175°C Applications PV Inverter UPS Power Welder Haloge n -f r e e

文件：475.85 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：100N40；Package：DFN5X6-8L；N-Channel Enhancement Mode Power MOSFET

Description The RM100N40DF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =100A RDS(ON)

文件：2.08748 Mbytes 页数：8 Pages

RECTRON

丽正国际