N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

文件：240.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：100N03；Package：TO-252-3L；N-Channel Enhancement Mode Power MOSFET

Featurese 30V, 100A Rosow 3.88mQ@Ves = 10V (Typ) «Advanced Trench Technology + Provide Excellent Rosco and Low Gate Charge « Lead free product is acquired

文件：2.87106 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Rectifier Diodes

FEATURES High density cell design for ultra low Rps(on) ® Excellent package for good heat dissipation Fully characterized Avalanche voltage and current ® Special process technology for high ESD capability Good stability and uniformity with high Eas Excellent package for good heat dissipation

文件：968.88 Kbytes 页数：3 Pages

EVVOSEMI

翊欧

丝印：100N03A；Package：TO-252；30V N-Channel Power

Features VDS = 30V,ID =90A RDS(ON),3.8 mΩ(Typ) @ VGS =10V RDS(ON), 6.4mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances

文件：910.69 Kbytes 页数：6 Pages

UMW

友台半导体

N-CHANNEL 30V - 0.0045??- 80A - DPAK - IPAK Planar STripFET??MOSFET

Description This MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics, low gate charge and less critical aligment steps therefore

文件：240.65 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel, normal level

Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x Ros(on) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC) for target applications

文件：1.01601 Mbytes 页数：11 Pages

INFINEON

英飞凌

N-channel 30V - 0.0045OHM - 80A - DPAK - IPAK Planar STripFET TM II Power MOSFET

Description This Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps

文件：434.62 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Diode ??Diode Module

Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance • Available in both M1 and M2 package

文件：137.28 Kbytes 页数：2 Pages

NAINA

Standard Recovery Diodes (Stud and Flat Base Type)

Features ● Diffused Series ● Industrial grade ● Available in Normal and Reverse polarity ● Metric and UNF thread type

文件：108.6 Kbytes 页数：2 Pages

NAINA

Phase Control Thyristors, 100A

Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Metric thread type available • Low thermal resistance

文件：116.96 Kbytes 页数：2 Pages

NAINA