丝印：03N06；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 03N06 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：913.23 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：03N06；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Description The 03N06A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：1.10609 Mbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：03N06；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

Description The 03N06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：862.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

60V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

MOSFET

Power MOSFETs find widespread use across various applications due to their low ON resistance, making them particularly appealing. By minimizing power dissipation, they contribute to cost reduction, smaller form factors, and less cooling requirements, resulting in significant enhancements for electro

GOFORD

谷峰半导体

0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs

These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to\nsource vol • 0.30A, 60V\n•rDS(ON)= 6.0Ω\n• Built in Current Limit ILIMIT  0.140 to 0.210A at 150oC\n• Built in Voltage Clamp\n• Temperature Compensating PSPICE® Model\n• 2kV ESD Protected\n• Controlled Switching Limits EMI and RFI;

Renesas

瑞萨