03N06C中文资料0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs数据手册Renesas规格书

描述 Description

These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to
source voltage clamping offers precision control of the circuit voltage when switching inductive loads. The “Logic Level” gate allows this device to be fully biased on with only 5V from gate to source, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

特性 Features

• 0.30A, 60V
•rDS(ON)= 6.0Ω
• Built in Current Limit ILIMIT  0.140 to 0.210A at 150oC
• Built in Voltage Clamp
• Temperature Compensating PSPICE® Model
• 2kV ESD Protected
• Controlled Switching Limits EMI and RFI