0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs

These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to\nsource vol • 0.30A, 60V\n•rDS(ON)= 6.0Ω\n• Built in Current Limit ILIMIT  0.140 to 0.210A at 150oC\n• Built in Voltage Clamp\n• Temperature Compensating PSPICE® Model\n• 2kV ESD Protected\n• Controlled Switching Limits EMI and RFI;

Renesas

瑞萨

N-Channel Enhancement Mode Power MOSFET

Description The 03N06L uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：862.97 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

MOSFET

Features - Improved dv/dt capability. - Fast switching. - RDS(ON)≤100mΩ@VGS=10V. - AEC-Q101 Qualified.

文件：498.29 Kbytes 页数：5 Pages

COMCHIP

典琦

MOSFET

Features - High density cell design for low RDS(ON). - Excellent package for heat dissipation.

文件：573.99 Kbytes 页数：6 Pages

COMCHIP

典琦