MX150 Sealed Female Connector, Dual Row, 20 Circuits, Polarization A, with Connector Position Assurance, Yellow, 13 Plugged Cavity

文件：52.54 Kbytes 页数：1 Pages

Molex

莫仕

MX150 Sealed Female Connector, Dual Row, 20 Circuits, Polarization A, with Connector Position Assurance, Yellow, 6 Plugged Cavity

文件：52.54 Kbytes 页数：1 Pages

Molex

莫仕

MX150 Sealed Female Connector, Dual Row, 4 Circuits, Polarization A, without Connector Position Assurance, with Open Standard Grommet Cap, Black

文件：52.75 Kbytes 页数：1 Pages

Molex

莫仕

丝印：033N08SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features • Dual-side cooled package with lowest Junction-top thermal resistance • Optimized for synchronous rectification in server and desktop • 100 avalanche tested • Superior thermal resistance • N-channel • 175°C rated • Pb-free lead plating; RoHS compliant • Halogen-free according to

文件：1.09223 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：033N03F2；Package：PG-TO220-3；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：837.73 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：033N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：998.61 Kbytes 页数：11 Pages

Infineon

英飞凌

丝印：033N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.44799 Mbytes 页数：14 Pages

Infineon

英飞凌

丝印：033N03F；Package：PG-TSDSON-8；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.26494 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：03360YE；Package：SOT669；60 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode MOSFET in an LFPAK56 (Power SO8) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • High thermal power dissipation capability • Suitable for thermally demanding environments due to 175 °C ra

文件：274.78 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：033N06NS；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON), VGS@10V, ID@40A

文件：752.07 Kbytes 页数：7 Pages

PANJIT

強茂