丝印：0330；Positive Temperature Coefficient (PTC) Data Sheet

Description The 1812 series provides surface mount resettable overcurrent protection with holding current from 0.1A to 3.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le

文件：834.52 Kbytes 页数：11 Pages

BRIGHTKING

君耀

丝印：0330；Positive Temperature Coefficient (PTC) Data Sheet

Description The 1812 series provides surface mount resettable overcurrent protection with holding current from 0.1A to 3.0A. This series offers complete portfolio in terms of holding current and working voltage, and is suitable for wide range of application. Features ■ RoHS compliant and le

文件：834.52 Kbytes 页数：11 Pages

BRIGHTKING

君耀

丝印：03380PSA；Package：SOP-8-225-1.27；-6.5A, -30V P CHANNEL MOSFET

DESCRIPTION SVT03380PSA is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high av

文件：340.23 Kbytes 页数：9 Pages

SILAN

士兰微

丝印：03380PSA；Package：SOP-8-225-1.27；-6.5A, -30V P CHANNEL MOSFET

DESCRIPTION SVT03380PSA is a P channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high av

文件：340.23 Kbytes 页数：9 Pages

SILAN

士兰微

丝印：033R5NAT；Package：TO-220HW-3L；180A, 30V N-CHANNEL MOSFET

DESCRIPTION The SVT033R5NAT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This

文件：275.76 Kbytes 页数：8 Pages

SILAN

士兰微

丝印：033R5NT；Package：TO-220-3L；180A, 30V N-CHANNEL MOSFET

DESCRIPTION The SVT033R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This

文件：272.19 Kbytes 页数：7 Pages

SILAN

士兰微

丝印：033R5NT；Package：TO-220-3L；180A, 30V N-CHANNEL MOSFET

DESCRIPTION The SVT033R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This

文件：272.17 Kbytes 页数：7 Pages

SILAN

士兰微

丝印：0333；Package：SOT-5X3；TPS61033X 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1 Features • Input voltage range: 1.8 V to 5.5 V • Output voltage range: 2.2 V to 5.5 V(TPS61033) – FB connects to VIN output voltage for fixed 5.0 V(TPS61033X) • Two valley switching current limit options – TPS61033: 5.5-A typical – TPS610333: 1.85-A typical • High efficiency and power ca

文件：1.85664 Mbytes 页数：29 Pages

TI

德州仪器

丝印：0333Q；Package：SOT-5X3；TPS61033-Q1 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1 Features • AEC-Q100 qualified: – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • Input voltage range: 1.8V to 5.5 V • Output voltage range: 2.2 V to 5.5 V (TPS61

文件：1.89434 Mbytes 页数：30 Pages

TI

德州仪器

丝印：033Q；Package：SOT-5X3；TPS61033-Q1 5.5-V 5.5-A 2.4-MHz Fully-Integrated Synchronous Boost Converter, with Output Discharge Function

1 Features • AEC-Q100 qualified: – Device temperature grade 1: –40°C to +125°C ambient operating temperature range • Functional Safety-Capable – Documentation available to aid functional safety system design • Input voltage range: 1.8V to 5.5 V • Output voltage range: 2.2 V to 5.5 V (TPS61

文件：1.89434 Mbytes 页数：30 Pages

TI

德州仪器