20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications. •BVCEO > -20V\n•IC = -2.5A Continuous Collector Current\n•ICM = -6A Peak Pulse Current\n•RCE(SAT) = 96mΩ for a Low Equivalent On-Resistance\n•Low Saturation Voltage (-220mV Max @ -1A)\n•hFE Characterized up to -6A for High Current Gain Hold-Up\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2);

Diodes

美台半导体

Package：SOT-23-6；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 2.5A SOT26

DIODES

美台半导体

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

文件：230.2 Kbytes 页数：6 Pages

ZETEX

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c

文件：242.9 Kbytes 页数：6 Pages

DIODES

美台半导体

20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -20V • IC = -2.5A Continuous Collector Current • ICM = -6A Peak Pulse Current • RCE(sat) = 96mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-220mV max @ 1A) • hFE Characterized up to -6A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS c

文件：242.9 Kbytes 页数：6 Pages

DIODES

美台半导体