ZXT10P20DE6Q中文资料20V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26数据手册Diodes规格书

描述 Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

特性 Features

•BVCEO > -20V
•IC = -2.5A Continuous Collector Current
•ICM = -6A Peak Pulse Current
•RCE(SAT) = 96mΩ for a Low Equivalent On-Resistance
•Low Saturation Voltage (-220mV Max @ -1A)
•hFE Characterized up to -6A for High Current Gain Hold-Up
•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•Halogen and Antimony Free. \"Green\" Device (Note 3)
•Qualified to AEC-Q101 Standards for High Reliability
•PPAP Capable (Note 4)

应用 Application

•DC-DC Converters
•Power Management Functions
•Power Switches
•Motor Control

简介

ZXT10P20DE6Q属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的ZXT10P20DE6Q晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。