CEU20N06

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■60V,20A,RDS(ON)=55mΩ@VGS=10V. RDS(ON)=75mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CEU20N06

N-ChannelEnhancementModeFieldEffectTransistor

CEU20N06

N-Channel60-V(D-S)MOSFET

CHM20N06PAPT

N-ChannelEnhancementModeFieldEffectTransistor

VOLTAGE60VoltsCURRENT20Ampere FEATURE ​​​​​​​*Smallpackage.(TO-252A) *SuperhighdensecelldesignforextremelylowRDS(ON). *Highpowerandcurrenthandingcapability. APPLICATION *Servomotorcontrol. *PowerMOSFETgatedrivers. *Otherswitchingapplications.

CJU20N06

N-ChannelPowerMOSFET

CJU20N06

N-ChannelMOSFETusesadvancedtrenchtechnology

CMD20N06L

N-Channel60-V(D-S)MOSFET

D20N06E

20Amps,55VoltsN-CHANNELPowerMOSFET

EMB20N06E

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

FQB20N06

60VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths