YJG30N06A

Marking：YJG30N06A；Package：PDFN5060；N-Channel Enhancement Mode Field Effect Transistor

30N06

30Amps,60VoltsN-CHANNELPOWERMOSFET

30N06

30Amps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC30N06isalowvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandexcellentavalanchecharacteristics.ThispowerMOSFETisusuallyusedatautomotiveapplicationsinpowersupplies,highe

30N06

60V,30AN-CHANNELPOWERMOSFET

30N06

iscN-ChannelMOSFETTransistor

30N06

FastSwitching

30N06

N-Channel60V(D-S)MOSFET

30N06

N-Channel60-V(D-S)MOSFET

30N06

60VN-ChannelEnhancementModePowerMOSFET

Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

30N06

60VN-ChannelEnhancementModePowerMOSFET

GeneralDescription The30N06usesadvancedtrenchtechnologyanddesignto provideexcellentRDS(ON)withlowgatecharge.Itcanbe usedinawidevarietyofapplications. Features VDS=60V,ID=30A RDS(ON),23mΩ(Typ)@VGS=10V RDS(ON),29mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology