丝印：1004；Package：SOT-223；N-Channel Enhancement Mode Field Effect Transistor

文件：640.15 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

中低压MOSFET(12V-400V)

YJ

益嘉源

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

文件：397.36 Kbytes 页数：4 Pages

CET

华瑞

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 3.7mΩ ID 180A UIS, Rg 100 Tested Pb‐Free Lead Plating

文件：231.55 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 4.0mΩ ID 87A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：205.43 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技