N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 100V, 3A, RDS(ON) = 200mΩ @VGS = 10V. RDS(ON) = 280mΩ @VGS = 6V. ■ High dense cell design for extremely low RDS(ON). ■ Rugged and reliable. ■ Lead free product is acquired. ■ SOT-223 package.

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CET

华瑞

N Channel MOSFET

CET

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N Channel MOSFET

CET

华瑞

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 3.7mΩ ID 180A UIS, Rg 100 Tested Pb‐Free Lead Plating

文件：231.55 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 100V RDSON (MAX.) 4.0mΩ ID 87A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：205.43 Kbytes 页数：5 Pages

EXCELLIANCE

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N-Channel Enhancement Mode Power MOSFET

文件：1.39626 Mbytes 页数：5 Pages

LEIDITECH

雷卯电子