IGBT单管

芯能的IGBT采用国际领先的沟槽结构+场截止型技术（Trench + FS），合理优化了器件电流密度 ，获得了最佳的饱和导通压降（Vce（sat））和关断损耗（Eoff）平衡。完美适用于电磁加热、电机驱动、工业电源等各类应用。芯能IGBT击穿电压保证足够冗余，电参数一致性高并且有牢固的可靠性。同时具有高的短路电流能力。 • 低饱和导通压降；\n• 高短路电流耐量；\n• 高的输入阻抗；\n• 正向温度系数，适合并联使用。\n;

Xiner

芯能半导体

High ruggedness, temperature stable behavior

General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES ·High speed switching ·High ruggedness, temperature stable behavior

文件：1.55826 Mbytes 页数：8 Pages

DINTEK

尚鼎芯

1350V/25A Trehch Field Stop IGBT

Features  1350V 25A,VCE(sat)(typ.) = 2.0 V@25A  Field Stop IGBT Technology.  High speed switching.  Fast switching and short tail current.  Positive VCE (sat) Temperature Coefficient. Benefits  High Efficiency for induction cooking,resonant converters.  Rugged Performance  Excelle

文件：4.96715 Mbytes 页数：7 Pages

LUGUANG

鲁光电子

1350V /25A Trench Field Stop IGBT

文件：752.4 Kbytes 页数：9 Pages

HMSEMI

华之美半导体