首页 >VSL100N10MS低压MOS管>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-CHANNELMOSFETinaTO-263PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
OptiMOS??Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-220packaging •Lowswitchingloss •Ultralowgatecharge •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplications •AC-DCconverters •LEDlighting •Unin | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerTrench짰MOSFET Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •RDS(on)=8.2mΩ(Typ.)@VGS=10V,ID=75A •Fastswitch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
TMOSPOWERFET100AMPERES100VOLTSRDS(on)=0.011OHM TMOSE-FET™PowerFieldEffecttransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforh | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
VANGUARD/威兆 |
22+ |
24000 |
询价拨打15919799957全天在线 |
询价 | |||
VANGUARD/威兆 |
2021+ |
SOT-23 |
1000 |
13632880263 |
询价 | ||
威兆 |
23+ |
SOT23-3L |
253223 |
原装正品现货 |
询价 | ||
VANGUARD/威兆 |
SOT23-3L |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
SAMWHA |
2018+ |
SMD |
827600 |
一级代理/全新现货/长期供应! |
询价 | ||
SAMWHA |
24+ |
SMD |
598000 |
原装现货假一赔十 |
询价 | ||
SAMWHA/三和 |
15+ROHS |
SMD |
426000 |
一级质量保证长期稳定提供货优价美 |
询价 | ||
SAMWHA-三和 |
24+25+/26+27+ |
车规-被动器件 |
96800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
三和 |
22+23+ |
0603 |
60507 |
绝对原装正品现货,全新深圳原装进口现货 |
询价 | ||
三和 |
23+ |
0603 |
4000 |
全新原装数量均有多电话咨询 |
询价 |
相关规格书
更多- VSP2260Y
- VSP3010Y
- VT1100S
- VT1612A
- VT6103
- VT6212L
- VT8231
- VT8233A
- VT8237
- VT82887
- VT82C42V
- VT82C586A
- VT82C587VP
- VT82C596
- VT82C596B
- VT82C597AT
- VT82C686A
- VT82C691
- VT82C693A
- VT82C694X
- VT8363A
- VT8364
- VT8365A
- VT8501
- VT8601T
- VV0654P001-EB
- VV6444C001-EC
- VXP501CPQ
- VY21983A
- VY22331A
- VY27357A
- W127H
- W134MH
- W137H
- W1452AAJ
- W150H
- W152-1G
- W156H
- W162-09G
- W166G
- W181-01G
- W181-53G
- W195BH
- W2012AAF
- W209CH
相关库存
更多- VSP2260Y_2K
- VSP3100Y
- VT1611A
- VT22030A
- VT6202
- VT6306
- VT8233
- VT8235
- VT82885N
- VT82C42N
- VT82C585VPX
- VT82C586B
- VT82C595
- VT82C596A
- VT82C597
- VT82C598MVP
- VT82C686B
- VT82C693
- VT82C694T
- VT8363
- VT8363E
- VT8365
- VT8371
- VT8601A
- VT8633
- VV6444C001
- VV6500C001
- VY21422E
- VY22107
- VY22549
- W124G
- W129AG
- W134SH
- W144H
- W149H
- W152-12G
- W153BH
- W158H
- W164G
- W180-01G
- W181-03G
- W194-70G
- W196G
- W208DH
- W211BH