丝印：FIR100N10P；Package：TO-220；N-Channel Enhancement Mode Power Mosfet

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福斯特半导体

功率MOS/中低压功率MOS

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福斯特

N-Channel Enhancement Mode Power Mosfet

文件：4.94384 Mbytes 页数：7 Pages

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福斯特半导体

N-Channel Enhancement

InPower Product Lines

文件：54.71 Kbytes 页数：6 Pages

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HiPerFET Power MOSFETs

HiPerFET Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features ● International standard packages ● JEDECTO-264 AA,epoxymeet UL94V-0, flammability classification ● miniBLOC with Aluminium nitride isolation ● Low RDS (on) HDMOSTM process ● Rugged polysilicon

文件：115.93 Kbytes 页数：4 Pages

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