N-CHANNEL MOSFET in a TO-263 Plastic Package

文件：893.02 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

MOSFET/场效应管

BlueRocket

蓝箭电子

OptiMOS?? Power-Transistor

文件：420.84 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

文件：513.83 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

文件：513.83 Kbytes 页数：5 Pages

CET-MOS

华瑞