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IXFK200N10P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFK200N10P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFN200N10P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFR200N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=120A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=9mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFR200N10P

PolarTMHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFR200N10P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFX200N10

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=200A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive ·ACandDCMotorDrives

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFX200N10P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXFX200N10P

PolarHiPerFETPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTC200N10T

TrenchMVPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTC200N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTF200N10T

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTH200N10T

TrenchMVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTH200N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTK200N10P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTK200N10P

PolarHTTMPowerMOSFET

PolarHT™PowerMOSFET N-ChannelEnhancementMode Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTN200N10T

TrenchMVTMPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTQ200N10T

TrenchMVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Integrated Circuits Division

IXTQ200N10T

TrenchMVTMPowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTQ200N10T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

供应商型号品牌批号封装库存备注价格
VS
23+
TO-220
50000
全新原装正品现货,支持订货
询价
VS
2020
TO-220
380000
原厂VIP渠道,亚太地区一级代理商,可提供更多数量!
询价
VALENS
23+
BGA484
12500
全新原装现货,假一赔十
询价
VALENS
21+
标准封装
730
进口原装,订货渠道!
询价
VALENS
2022+
BGA484
45000
询价
valens(斐仁斯)
22+
HSBGA-484
5000
进口原装25条/保证有货
询价
valens(斐仁斯)
24+
HSBGA-484
690000
支持实单/只做原装
询价
BOTHHAND
2021+
SOP48
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
BOTHHAND/帛汉
2021+
DIP/SOP
16500
十年专营原装现货,假一赔十
询价
威兆
23+
SOT-23
62132
原装正品现货
询价
更多VS200N10AT供应商 更新时间2024-5-1 11:00:00