| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A UltraLowVF=0.59VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordanc | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A UltraLowVF=0.59VatIF=5A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderdip275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordanc | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020, LFmaximumpeakof245°C •Materialcategorization: fordefinitionsofcompliancepleasesee www.vishay.com/doc?99912 TYPICALAPPLICAT | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High Voltage Trench MOS Barrier Schottky Rectifier FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximum peakof245°C(forTO-263ABpackage) •Solderbathtemperature275°Cmaximum,10s,per JESD22-B106(forTO-220AB,ITO-220AB, | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •Solderbathtemperature275°Cmax.10s,perJESD22-B106 •AEC-Q101qualified •ComplianttoRoHSDirective2002/95/ECandinaccordancetoWEEE2002/96/EC •Halogen-freea | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号：
VB2
- 功能描述：
肖特基二极管与整流器 20 Amp 100 Volt Dual TrenchMOS
- RoHS：
否
- 制造商：
Skyworks Solutions, Inc.
- 产品：
Schottky Diodes
- 峰值反向电压：
2 V
- 正向连续电流：
50 mA
- 配置：
Crossover Quad
- 正向电压下降：
370 mV
- 最大功率耗散：
75 mW
- 工作温度范围：
- 65 C to + 150 C
- 安装风格：
SMD/SMT
- 封装/箱体：
SOT-143
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay/GeneralSemiconduc |
24+ |
TO-263 |
1600 |
询价 | |||
VISHAY |
12+ |
TO-263 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
24+ |
TSSOP-20 |
7500 |
绝对原装自家现货!真实库存!欢迎来电! |
询价 | |||
FT/富士通 |
2016+ |
DIP |
6000 |
只做原装,假一罚十,专营继电器! |
询价 | ||
VISHAY |
23+ |
TO-263AB |
6680 |
全新原装优势 |
询价 | ||
Bridge |
16+ |
QFP |
890 |
进口原装现货/价格优势! |
询价 | ||
VISHAY |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
询价 | ||
SIP |
1000 |
原装长期供货! |
询价 | ||||
TI |
2020+ |
SOP |
4500 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
Block |
24+ |
NA |
2131 |
进口原装正品优势供应 |
询价 |
相关规格书
更多- VB2.3/2/15
- VB20100C-E3/4W
- VB20100S-E3/8W
- VB20150C-E3/8W
- VB20200C-E3/4W
- VB20200G-E3/8W
- VB20202C-M3/8W
- VB20202G-M3/4W
- VB20202G-M3/8W-CUTTAPE
- VB20-2051
- VB-2141
- VB2251
- VB3.2/2/12
- VB300
- VB30100C-E3/8W
- VB30100S-E3/8W
- VB30150C-E3/4W
- VB30200C-E3/8W
- VB30202C-M3/8W
- VB30-2031
- VB30-2071
- VB3211
- VB3221
- VB-3241
- VB325SPTR-E
- VB335-75
- VB400
- VB40100C-E3/8W
- VB40100G-E3/8W
- VB40150C-E3/4W
- VB40-2031
- VB40-2061
- VB4251
- VB525SPTR-E
- VB60100C-E3/4W
- VB60170G-E3/8W
- VB60-2061
- VB6A64CAP1VO
- VB80-P7X9-8/CS12
- VB-A103
- VBA108
- VBA109-75
- VBA111
- VBA90-1
- VBE100-12NO7
相关库存
更多- VB2.3/2/6
- VB20100S-E3/4W
- VB20150C-E3/4W
- VB20150S-E3/8W
- VB20200C-E3/8W
- VB20202C-M3/4W
- VB20202C-M3/8W-CUTTAPE
- VB20202G-M3/8W
- VB20-2031
- VB2121
- VB-2221
- VB2-FSW/FKW/FSW45
- VB3.2/2/6
- VB30100C-E3/4W
- VB30100S-E3/4W
- VB30120S-E3/4W
- VB30200C-E3/4W
- VB30202C-M3/4W
- VB30202C-M3/8W-CUTTAPE
- VB30-2051
- VB-3111
- VB-3211
- VB-3221
- VB325SP-E
- VB334N
- VB-36STBU-E
- VB40100C-E3/4W
- VB40100C-E3/8W-CUTTAPE
- VB40120C-E3/4W
- VB40170C-E3/8W
- VB40-2051
- VB40-2071
- VB525SP-E
- VB526SP-E
- VB60100C-E3/8W
- VB60-2051
- VB60-2071
- VB-6STBU-E
- VBA100-1
- VBA107
- VBA109
- VBA110
- VBA112
- VBA90-1-75
- VBE17-06NO7
