Trench MOS Schottky technology

Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10

文件：161.22 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage Trench MOS Barrier Schottky Rectifier

FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB a

文件：218.83 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Schotty Barrier Diode

FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

文件：314.45 Kbytes 页数：2 Pages

ISC

无锡固电

Dual High Voltage Trench MOS Barrier Schottky Rectifier Low VF = 0.59 V at IF = 5 A

Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

Vishay

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordanc

文件：168.29 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordanc

文件：168.29 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordanc

文件：168.29 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A

Ultra Low VF = 0.59 V at IF = 5 A FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordanc

文件：168.29 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.4 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：163.4 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技