N-Channel MOSFET

WFW23N50DP 是一款N-沟道高压功率MOSFT，具有开关速度快，dv/dt 能力提升等优点，可应用于LED电源，充电器，适配器，开关电源等应用 • 500V, 23A\n• RDS(ON) = 0.26Ω (Max.) @ VGS = 10V, ID = 11.5A\n• 100%雪崩测试\n• dv/dt 能力提升\n• 开关速度快;

Winsemi

稳先微电子

isc N-Channel MOSFET Transistor

文件：345.38 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications

文件：421.39 Kbytes 页数：5 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

文件：549.93 Kbytes 页数：5 Pages

FUJI

富士通