isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Applications

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FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

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FUJI

富士通

N-CHANNEL SILICON POWER MOSFETFeatures

Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGSringing waveform during switching Narrow band of the gate threshold voltage (4.2±0.5V) High avalanche durability Applications

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FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

FMH23N50E, Marking : 23N50E Features 1. Maintains both low power loss and low noise 2. Lower RDS(on) characteristic 3. More controllable switching dv/dt by gate resistance 4. Smaller VGSringing waveform during switching 5. Narrow band of the gate threshold voltage (3.0±0.5V)

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FUJI

富士通

Super FAP-E3 series / N-CHANNEL SILICON POWER MOSFET

FMH23N50E,  Marking : 23N50E 1. Maintains both low power loss and low noise\n2. Lower RDS(on) characteristic\n3. More controllable switching dv/dt by gate resistance\n4. Smaller VGSringing waveform during switching\n5. Narrow band of the gate threshold voltage (3.0±0.5V)\n6. High avalanche durability;

FUJI

富士通

23A, 500V N-CHANNEL POWER MOSFET

The 23N50Q uses advanced UTC technology to provideexcellent RDS(ON), low gate charge and operation with low gatevoltages. This device is suitable for use as a load switch, in PWMapplications, motor controls, inverters, choppers, audio amplifiersand high energy pulse circuits.

UTC

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