| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
23N50 | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
N-CHANNEL SILICON POWER MOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ |  | ||
N-CHANNEL SILICON POWER MOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNEL SILICON POWER MOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNEL SILICON POWER MOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFET FMH23N50E,Marking:23N50E Features 1.Maintainsbothlowpowerlossandlownoise 2.LowerRDS(on)characteristic 3.Morecontrollableswitchingdv/dtbygateresistance 4.SmallerVGSringingwaveformduringswitching 5.Narrowbandofthegatethresholdvoltage(3.0±0.5V) | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
N-CHANNELSILICONPOWERMOSFETFeatures Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFET | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
N-CHANNELSILICONPOWERMOSFET Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(4.2±0.5V) Highavalanchedurability Applications | FujiFUJI CORPORATION 株式会社ＦＵＪＩ | | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.235Ω(MAX) •Enhancementmode: Vth=3.0to5.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | ||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技 |  | ||
PowerMOSFET(Vdss=500V,Rds(on)=0.190ohm,Id=23A) FeaturesandBenefits •SuperFastbodydiodeeliminatestheneedforexternaldiodesinZVSapplications •LowerGatechargeresultsinsimplerdriverequirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •HigherGatevoltagethresholdoffersimprovednoiseimmunity Application | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET FEATURES •Superfastbodydiodeeliminatestheneedfor externaldiodesinZVSapplications •Lowergatechargeresultsinsimplerdrive requirements •EnhanceddV/dtcapabilitiesofferimprovedruggedness •Highergatevoltagethresholdoffersimprovednoise immunity •Materialcategoriza | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | | ||
PowerMOSFET FEATURES •SuperfastBodyDiodeEliminatestheNeedforExternalDiodesinZVSApplications •LowerGateChargeResultsinSimplerDriveRequirements •EnhanceddV/dtCapabilitiesOfferImprovedRuggedness •HigherGateVoltageThresholdOffersImprovedNoiseImmunity •Lead(Pb)-freeAvailab | VishayVishay Siliconix 威世科技 | |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SANYO/三洋 |
90 |
询价 | |||||
SL |
22+ |
TO-3P |
18000 |
只做全新原装,支持BOM配单,假一罚十 |
询价 | ||
FUJI |
1408+ |
TO-3P |
8000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
FUI |
19+ |
TO-3P |
58893 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
FUJI-富士 |
22+23+ |
TO-3P |
30546 |
绝对原装正品全新进口深圳现货 |
询价 | ||
FUJI |
18+ |
TO-3p |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
23+ |
N/A |
46080 |
正品授权货源可靠 |
询价 | |||
. |
1746+ |
pcs |
8862 |
深圳公司现货!特价支持工厂客户!提供样品! |
询价 | ||
UTC/友顺 |
2021+ |
TO247 |
100000 |
原装现货 |
询价 | ||
FUJI/富士电机 |
22+ |
TO-3P |
20000 |
深圳原装现货正品有单价格可谈 |
询价 |
相关规格书
更多- 23N-50-0-1
- 23N50-0-16/133
- 23N-50-0-31
- 23N-50-0-85/133NE
- 23NA005G
- 23NAB12T4V1
- 23NB 423226
- 23NEONR110V
- 23NM60ND
- 23P102-8
- 23P103-3
- 23P104-7
- 23P-140M
- 23P1CD100
- 23PDA101KLB22A
- 23PDA101KWB22A
- 23PDA101MLB22A
- 23PDA101MWB22A
- 23PDB101KLB22A
- 23PDB101KWB22A
- 23PDB101MLB22A
- 23PDB101MWB22A
- 23PDC101KLB22A
- 23PDC101KWB22A
- 23PDC101MLB22A
- 23PDC101MWB22A
- 23PS110
- 23PS115
- 23PS122
- 23PS133
- 23PS147
- 23PSA101KLB22A
- 23PSA101KWB22A
- 23PSA101MLB22A
- 23PSA101MWB22A
- 23PSB101KLB22A
- 23PSB101KWB22A
- 23PSB101MLB22A
- 23PSB101MWB22A
- 23PSC101KLB22A
- 23PSC101KWB22A
- 23PSC101MLB22A
- 23PSC101MWB22A
- 23PW210
- 23PW222
相关库存
更多- 23N-50-0-16
- 23N-50-0-23/133
- 23N-50-0-33
- 23NA002G
- 23NA010G
- 23NAB12T4V1_09
- 23NB 863226
- 23NEONV110V
- 23P100
- 23P103-1
- 23P104-5
- 23P111-3
- 23P1CD025
- 23PDA101KLA22A
- 23PDA101KWA22A
- 23PDA101MLA22A
- 23PDA101MWA22A
- 23PDB101KLA22A
- 23PDB101KWA22A
- 23PDB101MLA22A
- 23PDB101MWA22A
- 23PDC101KLA22A
- 23PDC101KWA22A
- 23PDC101MLA22A
- 23PDC101MWA22A
- 23PN
- 23PS112
- 23PS118
- 23PS127
- 23PS139
- 23PSA101KLA22A
- 23PSA101KWA22A
- 23PSA101MLA22A
- 23PSA101MWA22A
- 23PSB101KLA22A
- 23PSB101KWA22A
- 23PSB101MLA22A
- 23PSB101MWA22A
- 23PSC101KLA22A
- 23PSC101KWA22A
- 23PSC101MLA22A
- 23PSC101MWA22A
- 23PW156
- 23PW220
- 23PW233
