THINKI 10 Ampere,100 Volt Trench Process Low Vf Schottky Barrier Rectifier

Features Low forward voltage drop ThinkiSemi matured trench barrier schottky High current capability High surge current capability Low reverse leakage current Application Inverter/Amplifier Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger

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THINKISEMI

思祁半导体

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件：111.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件：111.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件：111.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件：111.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件：111.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.453 V at IF = 5 A FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward volatge drop, low power losses •

文件：111.06 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Superior Peak Surge Current Ratings in Small Disc Sizes

Description The Littelfuse LV UltraMOV™ Series of low voltage, high surge current, radial leaded varistors provides an ideal circuit protection solution for lower DC voltage applications by offering higher surge ratings than ever before available in such small discs. Features • Breakthrough in

文件：778.6 Kbytes 页数：2 Pages

Littelfuse

力特

High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available -

文件：103.64 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified

文件：91.72 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世