Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：111.24 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.56 V at IF = 2.5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

文件：120.86 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.56 V at IF = 2.5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

文件：120.86 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：111.44 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：111.44 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：111.28 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual Low-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：111.28 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Superior Peak Surge Current Ratings in Small Disc Sizes

Description The Littelfuse LV UltraMOV™ Series of low voltage, high surge current, radial leaded varistors provides an ideal circuit protection solution for lower DC voltage applications by offering higher surge ratings than ever before available in such small discs. Features • Breakthrough in

文件：778.6 Kbytes 页数：2 Pages

Littelfuse

力特

Surge Arrester 2-Electrode-Arrester

Surge Arrester 2-Electrode-Arrester

文件：16.32 Kbytes 页数：2 Pages

EPCOS

爱普科斯

Surge Arrester 2-Electrode-Arrester

Surge Arrester 2-Electrode-Arrester

文件：83.1 Kbytes 页数：2 Pages

EPCOS

爱普科斯