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V10-A500X

Surge Arrester 2-Electrode-Arrester

Features ■ Standard size ■ Maximum current rating ■ Fast response time ■ Stable performance over life ■ High insulation resistance ■ RoHS-compatible Applications ■ AC power lines ■ Class II - requirements

文件:83.04 Kbytes 页数:2 Pages

EPCOS

爱普科斯

V10D100C

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a

文件:137.84 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10D100C_V01

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a

文件:137.84 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10D100CHM3SLASHI

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A

• Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available:

文件:126.01 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10D100C-M3SLASHI

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A

• Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available:

文件:126.01 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10D120C

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件:127.68 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10D120C_V01

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件:127.68 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10D120CHM3SLASHI

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

文件:127.04 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10D120C-M3SLASHI

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

文件:127.04 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

V10D170CHM3SLASHI

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier

• Very low profile - typical height of 1.7 mm • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available

文件:111.61 Kbytes 页数:5 Pages

VISHAYVishay Siliconix

威世威世科技公司

晶体管资料

  • 型号:

    V10-15A

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Ge-PNP

  • 性质:

    低频或音频放大 (LF)_开关管 (SW)

  • 封装形式:

    直插封装

  • 极限工作电压:

    10V

  • 最大电流允许值:

    0.03A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    3AX54C,

  • 最大耗散功率:

    0.2W

  • 放大倍数:

    β=20

  • 图片代号:

    D-161

  • vtest:

    10

  • htest:

    999900

  • atest:

    0.03

  • wtest:

    0.2

技术参数

  • 线规 - AWG:

    16~22

  • 线规 - mm²:

    0.25~1.65

供应商型号品牌批号封装库存备注价格
Martel
1931+
N/A
567
加我qq或微信,了解更多详细信息,体验一站式购物
询价
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
询价
Martel Electronics
2026+
原厂封装
56000
只做原厂原装正品现货 正品授权货源可追溯
询价
VISHAY/威世
25+
SOT23
15000
全新原装现货,价格优势
询价
KEMET
25+
电容器
2926
就找我吧!--邀您体验愉快问购元件!
询价
KEMET
25+
N/A
20948
样件支持,可原厂排单订货!
询价
KEMET
25+
N/A
21000
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
ALLWINNER/全志
24+
TFBGA-259
5000
ALLWINNE原厂支持只做自己现货
询价
ALLWINN
2447
BGA
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
ALLWINNER/全志
22+
BGA
18000
原装正品
询价
更多V1供应商 更新时间2026-1-27 10:19:00