Surge Arrester 2-Electrode-Arrester

Features ■ Standard size ■ Maximum current rating ■ Fast response time ■ Stable performance over life ■ High insulation resistance ■ RoHS-compatible Applications ■ AC power lines ■ Class II - requirements

文件：83.04 Kbytes 页数：2 Pages

EPCOS

爱普科斯

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a

文件：137.84 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a

文件：137.84 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A

• Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available:

文件：126.01 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A

• Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available:

文件：126.01 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：127.68 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: -

文件：127.68 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

文件：127.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.53 V at IF = 2.5 A

• Trench MOS Schottky technology • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: - Automotive

文件：127.04 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier

• Very low profile - typical height of 1.7 mm • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available

文件：111.61 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世