| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
V10D100C | Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a 文件：137.84 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
V10D100C | Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：126.01 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | |
Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier FEATURES • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified a 文件：137.84 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: 文件：126.01 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A • Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available: 文件：126.01 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：99.15 Kbytes 页数：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：126.01 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：99.15 Kbytes 页数：6 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier 文件：126.01 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Dual High-Voltage Trench MOS Barrier Schottky Rectifier 文件：92.46 Kbytes 页数：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay |
24+ |
NA |
3005 |
进口原装正品优势供应 |
询价 | ||
VISHAY |
25+ |
TO-263 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Semiconductor Diodes Di |
22+ |
TO263AC (SMPD) |
9000 |
原厂渠道,现货配单 |
询价 | ||
Vishay |
2022+ |
原厂原包装 |
6800 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
Vishay Semiconductor Diodes Di |
23+ |
SMPD |
8000 |
只做原装现货 |
询价 | ||
Vishay General Semiconductor - |
25+ |
TO-263-3 D?Pak(2 引线 + 凸片 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
VISHAY/威世 |
23+ |
TO-263AC(SMPD) |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VISHAY/威世 |
25+ |
ROHS |
880000 |
明嘉莱只做原装正品现货 |
询价 | ||
24+ |
N/A |
75000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
VISHAY |
1925+ |
TO-263AC-2 |
5 |
原装正品 |
询价 |
相关规格书
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相关库存
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- V1-11K
- V1-12K
