Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：99.15 Kbytes 页数：6 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.48 V at IF = 2.5 A

• Trench MOS Schottky technology generation 2 • Very low profile - typical height of 1.7 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available:

文件：126.01 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High Voltage TMBS짰 (Trench MOS Barrier Schottky) Rectifier

文件：126.01 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

文件：92.46 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世科技

Package：TO-263-3，D²Pak（2 引线 + 凸片）变型；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：DIODE ARRAY SCHOTTKY 100V SMPD

Vishay General Semiconductor - Diodes Division