High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.60 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：100.98 Kbytes 页数：5 Pages

VishayVishay Siliconix

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High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

文件：95.63 Kbytes 页数：5 Pages

VishayVishay Siliconix

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High Current Density Surface-Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Material categorization: for defi

文件：95.63 Kbytes 页数：5 Pages

VishayVishay Siliconix

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THINKI 10 Ampere,200 Volt Traditional Planar Process Schottky Barrier Rectifier

Features Low forward voltage drop ThinkiSemi traditional planar schottky High current capability High surge current capability Low reverse leakage current Application Inverter/Amplifier Photovoltaic Solar Cell Protection/SMPS Battery Reverse Protection Circuit/Charger

文件：1.7727 Mbytes 页数：3 Pages

THINKISEMI

思祁半导体

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2.5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering c

文件：97.6 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2.5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering c

文件：97.6 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2.5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering c

文件：97.6 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.61 V at IF = 2.5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering c

文件：97.6 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.6 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：96.67 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世

High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.6 V at IF = 5 A

• Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive

文件：96.67 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世