TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

High Efficiency DC／ DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • High speed switching • Small gate charge: QSW = 3.6 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 13 mΩ (typ.) • High forward t

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TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

Toshiba

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rfm

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KEYSIGHT

是德科技