Field Effect Transistor Silicon N-Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package • Low drain-source ON-resistance: RDS (ON) = 5.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 46 S (typ.) • Low leakage current: IDSS = 10 μA (

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Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)

Toshiba

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

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TOSHIBA

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Notebook PC Applications Portable Equipment Applications

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Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV)

Notebook PC Applications Portable Equipment Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) • High forward transfer admittance:|Yfs| = 36 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) • Enhancement mode

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