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TPC8127

Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Power Management Switch Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON)= 5 mΩ(typ.) • Low leakage current: IDSS= −10 μA (max) (VDS= −30 V) • Enhancement mode: Vth= −0.8 to −2.0 V (VDS= −10

文件:222.18 Kbytes 页数:7 Pages

TOSHIBA

东芝

TPC8127

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件:1.58274 Mbytes 页数:73 Pages

TOSHIBA

东芝

TPC8127

P-Channel 30-V (D-S) MOSFET

文件:992.21 Kbytes 页数:9 Pages

VBSEMI

微碧半导体

TPC8127

Power MOSFET (P-ch single)

Application Scope:Power management switches / Lithium-Ion secondary batteries\nPolarity:P-ch\nGeneration:U-MOSⅥ\nRoHS Compatible Product(s) (#):Available\nAssembly bases:马来西亚 Drain current ID -13 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS -25/+20 V ;

Toshiba

东芝

详细参数

  • 型号:

    TPC8127

  • 功能描述:

    MOSFET P-CH MOSFET -30V DC -13A -10uA 5mOhm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
TOSHIBA/东芝
24+
SOP8
8950
BOM配单专家,发货快,价格低
询价
TOSHIBA
24+
SOP8
9800
一级代理/全新原装现货/长期供应!
询价
TOSHIBA/东芝
23+
SOP8
18204
原装正品代理渠道价格优势
询价
TOSHIBA/东芝
24+
SOP-8
503375
免费送样原盒原包现货一手渠道联系
询价
NK/南科功率
2025+
SOP-8
3000
国产南科平替供应大量
询价
TOSHIBA
11+
SOP-8
8000
全新原装,绝对正品现货供应
询价
TOSHIBA/东芝
18+
SOP-8
41200
原装正品,现货特价
询价
TOSHIBA
24+
SOP8
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
TOSHIBA/东芝
2020
SOP8
3300
绝对全新原装现货,欢迎来电查询
询价
TOSHIBA/东芝
20+
SOP-8
38900
原装优势主营型号-可开原型号增税票
询价
更多TPC8127供应商 更新时间2025-10-7 13:40:00