Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Power Management Switch Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.) • High forward transfer admittance: |Yfs| =80 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS =

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TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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P-Channel 30 V (D-S) MOSFET

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VBSEMI

微碧半导体

Power MOSFET (P-ch single)

Application Scope：Mobile equipments / Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅥ\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 / 马来西亚 Drain current ID -18 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -30 V \nGate-Source voltage VGSS -25/+20 V ;

Toshiba

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