TPC8104-H

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)

HighSpeedandHighEfficiencyDC−DCConverters LithiumIonBatteryApplications NotebookPCs PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Highspeedswitching •Smallgatecharge:Qg=17nC(typ.) •Lowdrain−sourceONresistance:RDS(ON)=38mΩ(t

TPC8104-H

P-Channel 30-V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •ComplianttoRoHSDirective2002/95/EC

TPCA8104

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCA8104

High-SideSwitchingApplications

TPCC8104

Lithium-IonSecondaryBatteriesPowerManagementSwitches

TPCC8104

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TPCF8104

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType(U-MOS??

TPCF8104

TOSHIBAFIELDEFFECTTRANSISTORSILICONPCHANNELMOSTYPE(U-MOS4)

NotebookPCApplications PortableEquipmentApplications •Lowdrain-sourceONresistance:RDS(ON)=21mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=9.6S(typ.) •Lowleakagecurrent:IDSS=−10μA(max)(VDS=−30V) •Enhancementmode:Vth=−0.8to−2.0V(VDS=−10V,ID=−1mA

TPCS8104

TOSHIBAFieldEffectTransistorSiliconPChannelMOSType

LithiumIonBatteryApplications NotebookPCApplications PortableEquipmentApplications •Smallfootprintduetosmallandthinpackage •Lowdrain-sourceONresistance:RDS(ON)=8.1mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=23S(typ.) •Lowleakagecurrent:IDSS=−10μA(m

TPCS8104

LithiumIonBatteryApplicationsNotebookPCApplicationsPortableEquipmentApplications