TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)

High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications • Small footprint due to small and thin package • High speed switching • Small gate charge : Qg = 17 nC (typ.) • Low drain−source ON resistance : RDS (ON) = 38 mΩ (t

文件：327.2 Kbytes 页数：7 Pages

TOSHIBA

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P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC

文件：961.34 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)

Toshiba

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High-Side Switching Applications

文件：239.56 Kbytes 页数：7 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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