Field Effect Transistor Silicon P Channel MOS Type (U-MOS??

Lithium Ion Battery Applications Notebook PC Applications • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON)= 6.3 mΩ(typ.) • High forward transfer admittance: |Yfs| = 30S (typ.) • Low leakage current: IDSS= −10μA (max) (VDS= −30 V) • Enhancement m

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TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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P-Channel 30 V (D-S) MOSFET

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VBSEMI

微碧半导体

Power MOSFET (P-ch single)

Application Scope：Notebook PCs\nPolarity：P-ch\nGeneration：U-MOSⅤ\nRoHS Compatible Product(s) (#)：Available Drain current ID -12 A \nPower Dissipation PD 1.9 W \nDrain-Source voltage VDSS -30 V ;

Toshiba

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