650V SuperGaN® FET in TO-247 (source tab)

Description The TP65H050G4YS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

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采用 TO247-4 封装的 650V 50mΩ SuperGaN FET

TP65H050G4YS 650V 50mΩ 氮化镓 （GaN） FET 是使用瑞萨电子第四代平台构建的常闭器件。 它结合了最先进的高压 GaN HEMT 和低压硅 MOSFET 技术，提供卓越的可靠性和性能。\n\n瑞萨电子 GaN 通过更低的栅极电荷、更低的交越损耗和更小的反向恢复电荷，提供比硅更高的效率。\n\nTP65H050G4YS采用行业标准的 TO-247-4 封装，具有 Kelvin 源极和通用源极封装配置。 • 第四代技术\n• 符合 JEDEC 标准的 GaN 技术\n• 动态 RDS（on）eff 生产测试\n• 坚固的设计，定义\n• 宽栅极安全裕度\n• 瞬态过压能力\n\n• 非常低的 QRR\n• 减少分频损耗\n• 符合 RoHS 标准和无卤素包装\n• 在硬开关和软开关电路中实现更高的效率\n• 提高功率密度\n• 减小系统尺寸和重量\n• 总体降低系统成本\n\n• 使用常用的栅极驱动器轻松驱动\n• 用于提高性能的 Kelvin 源\n• 采用 Si 和 SiC TO-247-4 的引脚对引脚插入式封装（注意：公端是源极与漏极）;

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650V SuperGaN® FET in TO-263 (source tab)

Description The TP65H050G4BS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform

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650V SuperGaN® FET in TOLL (source tab)

Description The TP65H050G4QS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

文件：1.49252 Mbytes 页数：13 Pages

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650V SuperGaN® FET in TOLL (source tab)

Description The TP65H050G4QS 650V, 50 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform us

文件：1.49252 Mbytes 页数：13 Pages

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