650V SuperGaN® GaN FET in PQFN (source tab)

Features ■ Gen IV technology ■ JEDEC-qualified GaN technology ■ Dynamic RDS(on)eff production tested ■ Robust design, defined by ● Transient over-voltage capability ● Operation with E-mode Gate drivers without need for Zener protection. ■ Very low QRR ■ Reduced crossover loss ■ RoHS comp

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650V SuperGaN® GaN FET in PQFN (source tab)

Features ■ Gen IV technology ■ JEDEC-qualified GaN technology ■ Dynamic RDS(on)eff production tested ■ Robust design, defined by ● Transient over-voltage capability ● Operation with E-mode Gate drivers without need for Zener protection. ■ Very low QRR ■ Reduced crossover loss ■ RoHS comp

文件：880.33 Kbytes 页数：15 Pages

RENESAS

瑞萨

650V 150mΩ SuperGaN GaN FET in PQFN88

The TP65H150G4LSGBE 650V 150mΩ Gallium Nitride (GaN) FET, housed in an 8x8 PQFN industry-standard package, is a normally-off device built on Renesas' Gen IV SuperGaN® platform. It integrates a high-voltage GaN HEMT with an optimized low-voltage silicon MOSFET, delivering exceptional performance, sta • 150mOhm, 650V GaN Device in PQFN 8x8 industry package\n• Dynamic RDS(on)eff production tested\n• 800V transient over-voltage capability\n• Low QRR\n• Achieves increased efficiency in both hard-switched and soft-switched circuits, enabling:• Increased power density\n• Overall reduction in system co;

Renesas

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650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H150G4LSGB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platfor

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TRANSPHORM

650V SuperGaN GaN FET in PQFN (source tab)

Description The TP65H150G4LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented

文件：1.06533 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in TO-220 (source tab)

Description The TP65H150G4PS 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented

文件：1.05158 Mbytes 页数：12 Pages

TRANSPHORM