650V SuperGaN® GaN FET in TO-220 (source tab)

Description The TP65H150G4PS 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented

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采用 TO-220 封装的 650V 150mΩ SuperGaN FET

TP65H150G4PS 650V 150mΩ 氮化镓 （GaN） FET 是使用瑞萨电子第四代平台构建的常闭器件。 它结合了最先进的高压 GaN HEMT 和低压硅 MOSFET 技术，提供卓越的可靠性和性能。\n瑞萨电子 GaN 通过更低的栅极电荷、更低的交越损耗和更小的反向恢复电荷，提供比硅更高的效率。\nTP65H150G4PS采用行业标准 TO-220 封装，具有通用源封装配置。 • 符合 JEDEC 标准的 GaN 技术\n• 坚固的设计，定义• 固有寿命测试\n• 瞬态过压能力\n• 非常低的 QRR\n• 符合 RoHS 标准和无卤素包装\n• 提高功率密度\n• 总体降低系统成本\n• 在硬开关和软开关电路中实现更高的效率\n• 使用常用栅极驱动器易于驱动;

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650V 150mΩ SuperGaN® FET in TO-220

The TP65H150G4PS 650V 150mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.\n\nTransphorm GaN offers improved eff

Transphorm

N-Channel 650-V GaN MOSFET

Key Features: • Low rDS(on) GaN technology • Low thermal impedance • Fast switching speed

文件：346.54 Kbytes 页数：5 Pages

ANALOGPOWER

650V SuperGaN GaN FET in PQFN (source tab)

Description The TP65H150G4LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented

文件：1.06533 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H150G4LSGB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platfor

文件：1.01964 Mbytes 页数：12 Pages

TRANSPHORM