N-Channel 650-V GaN MOSFET

Key Features: • Low rDS(on) GaN technology • Low thermal impedance • Fast switching speed

文件：346.54 Kbytes 页数：5 Pages

AnalogPower

MOSFET

AnalogPower

美商亚柏

650V SuperGaN GaN FET in PQFN (source tab)

Description The TP65H150G4LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented

文件：1.06533 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H150G4LSGB 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platfor

文件：1.01964 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Features ■ Gen IV technology ■ JEDEC-qualified GaN technology ■ Dynamic RDS(on)eff production tested ■ Robust design, defined by ● Transient over-voltage capability ● Operation with E-mode Gate drivers without need for Zener protection. ■ Very low QRR ■ Reduced crossover loss ■ RoHS comp

文件：880.33 Kbytes 页数：15 Pages

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