650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H070G4LSG 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented

文件：1.03044 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and pate

文件：1.0638 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H070G4LSGB 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and pate

文件：1.0638 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H070G4LSG 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented

文件：1.03044 Mbytes 页数：12 Pages

TRANSPHORM

分离式大功率氮化镓功率元件

The TP65H070G4LSGB 650V 72mΩ Gallium Nitride (GaN) FET is a normally-off device built using Transphorm’s Gen IV platform. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

JPX

强弦科技

650V, 70mΩ, SuperGaN FET in PQFN88 Performance Package

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