650V SuperGaN® FET in TOLL (source tab)

Description The TP65H070G4QS 650V, 72 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses

文件：2.093889 Mbytes 页数：13 Pages

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650V SuperGaN® FET in TOLL (source tab)

Description The TP65H070G4QS 650V, 72 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform. It combines a state-of-the-art high voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance. The Gen IV SuperGaN® platform uses

文件：2.093889 Mbytes 页数：13 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H070G4RS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented d

文件：1.05448 Mbytes 页数：12 Pages

TRANSPHORM

650V SuperGaN® GaN FET in PQFN (source tab)

Description The TP65H070G4RS 650V, 72mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. The Gen IV SuperGaN® platform uses advanced epi and patented d

文件：1.05448 Mbytes 页数：12 Pages

TRANSPHORM